![]() ![]() Some Part number from the same manufacture General SemiconductorĢW005G Glass Passivated Single-phase Bridge RectifierĢW005Gthru2W10G Glass Passivated Single-phase Bridge RectifierģN246 Glass Passivated Single-phase Bridge RectifierģN247 Glass Passivated Single-phase Bridge RectifierģN253thru3N259 Glass Passivated Single-phase Bridge RectifierĥKP100 Glass Passivated Junction Transient Voltage SuppressorīYV26E : Glass Passivated Glass Passivated Fast Efficient Rectifier Reverse Voltage - 800 to 1000volts Forward Current - 1.0 AmpereġN4002GPHE3/54 : Diodes, Rectifier - Single Discrete Semiconductor Product 1A 100V Standard DIODE GP 1A 100V DO-204AL Specifications: Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) If: 1.1V 1A Reverse Recovery Time (trr): 2µs Current - Reverse Leakage Vr: 5♚ 100V Speed: Standard Recovery >500ns,>200mA (Io) MountingĪU1PD-M3/85A : Diodes, Rectifier - Single Discrete Semiconductor Product 1A 200V Avalanche DIODE ULT FAST 1A 200V SMP Specifications: Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) If: 1.5V 1A Reverse Recovery Time (trr): 75ns Current - Reverse Leakage Vr: 1♚ 200V Speed: Fast Recovery =200mA (Io) Mounti 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectorsįig. Parameter Noise Figure Delay Time (see fig. ICEV -IEBV -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO hie hre fT CCBO CEBO hfe hoe Note: (1) Valid provided that leads are kept at ambient temperature.Ĭollector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Ratings at 25☌ ambient temperature unless otherwise specified. Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation = 25☌ Symbol VCEO VCBO VEBO IC Ptot RJA Tj TS 0.18g Packaging Codes/Options: 5K per container, 20K/box E7/4K per Ammo mag., 20K/box This transistor is also available in the SOT-23 case with the type designation MMBT3906.Ĭase: TO-92 Plastic Package Weight: approx. On special request, this transistor is also manufactured in the pin configuration TO-18. As complementary type, the NPN transistor 2N3904 is recommended. ![]() PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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